icte5 thru icte18c, 1n6373 thru 1n6386 www.vishay.com vishay general semiconductor revision: 18-sep-12 1 document number: 88356 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 t rans z orb ? transient voltage suppressors devices for bi-direction applications for bi-directional TYPES, us e c suffix (e.g. icte18c). electrical characteristics apply in both directions. features ? glass passivated chip junction ? available in uni-directional and bi-directional ? 1500 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, and telecommunication. mechanical data case: molded epoxy body over passivated junction molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant and commercial grade base p/nhe3 - rohs compliant and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional TYPES the color band denotes cathode end, no marking on bi-directional TYPES notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) 8.3 ms single half sine -wave, duty cycle = 4 pulses per minute maximum primary characteristics v wm 5.0 v to 18 v v br (uni-directional) 6.0 v to 21.2 v v br (bi-directional) 9.2 v to 21.2 v p ppm 1500 w p d 6.5 w i fsm 200 a t j max. 175 c polarity uni-directional, bi-directional package 1.5ke case style 1.5ke maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit peak pulse power di ssipation with a 10 /1000 s waveform (1) (fig. 1) p ppm 1500 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on infinite heatsink at t l = 75 c (fig. 8) p d 6.5 w peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) i fsm 200 a maximum instantaneous forward voltag e at 100 a for uni-directional only v f 3.5 v operating junction and storage temperature range t j , t stg - 55 to + 175 c
icte5 thru icte18c, 1n6373 thru 1n6386 www.vishay.com vishay general semiconductor revision: 18-sep-12 2 document number: 88356 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) ?c? suffix indicates bi-directional (2) icte5 and 1n6373 are not av ailable as bi-directional (3) clamping factor: 1.33 at full rated power; 1.20 at 50 % ra ted power; clamping factor: the ratio of the actual v c (clamping voltage) to the v br (breakdown voltage) as m easured on a specific device note (1) aec-q101 qualified electrical characteristics (jedec registered data) (t a = 25 c unless otherwise noted) jedec type number general semiconductor part number stand-off voltage v wm (v) minimum breakdown voltage at 1.0 ma v br (v) maximum reverse leakage at v wm i d (a) maximum clamping voltage at i pp = 1.0 a v c (v) maximum clamping voltage at i pp = 10 a v c (v) maximum peak pulse current i pp (a) uni-directional TYPES 1n6373 (2) icte5 (2) 5.0 6.0 300 7.1 7.5 160 1n6374 icte8 8.0 9.4 25.0 11.3 11.5 100 1n6375 icte10 10.0 11.7 2.0 13.7 14.1 90 1n6376 icte12 12.0 14.1 2.0 16.1 16.5 70 1n6377 icte15 15.0 17.6 2.0 20.1 20.6 60 1n6378 icte18 18.0 21.2 2.0 24.2 25.2 50 bi-directional TYPES 1n6382 icte8c 8.0 9.4 50 11.4 11.6 100 1n6383 icte10c 10.0 11.7 2.0 14.1 14.5 90 1n6384 icte12c 12.0 14.1 2.0 16.7 17.1 70 1n6385 icte15c 15.0 17.6 2.0 20.8 21.4 60 1n6386 icte18c 18.0 21.2 2.0 24.8 25.5 50 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode icte5-e3/54 0.968 54 1400 13" di ameter paper tape and reel icte5he3/54 (1) 0.968 54 1400 13" diameter paper tape and reel
icte5 thru icte18c, 1n6373 thru 1n6386 www.vishay.com vishay general semiconductor revision: 18-sep-12 3 document number: 88356 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capac itance uni-directional fig. 5 - typical junction capacitance fig. 6 - maximum non-repetitive forward surge current uni-directional only t d - p u lse w idth (s) p ppm - peak p u lse po w er (k w ) 1.0 s 10 s 100 s 1.0 ms 10 ms 0.1 s 0.1 1 10 100 n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 100 75 50 25 0 0 25 50 75 100 125 150 175 200 peak p u lse p o w er (p pp ) or c u rrent (i pp ) derating in percentage, % t j - initial temperat u re (c) 0 50 100 150 t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 t d 10/1000 s w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm v br - breakdo w n v oltage ( v ) c j - j u nction capacitance (pf) 100 1000 10 000 100 000 10 1.0 100 200 meas u red at zero bias meas u red at stand-off v oltage v w m t j = 25 c f = 1.0 mhz v sig = 50 m v p-p v br - breakdo w n v oltage ( v ) c j - j u nction capacitance (pf) 100 1000 10 000 100 000 10 1.0 100 200 bi-directional type meas u red at zero bias meas u red at stand-off v oltage v w m n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c nu m b er of cycles at 60 hz i fsm - peak for w ard s u rge c u rrent (a) 1 5 10 50 100 10 50 100 200 t j = t j max. 8.3 ms single half sine- w a v e
icte5 thru icte18c, 1n6373 thru 1n6386 www.vishay.com vishay general semiconductor revision: 18-sep-12 4 document number: 88356 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical characteristics clamping voltage fig. 8 - power derating curve package outline dimensions in inches (millimeters) v c - clamping v oltage ( v ) i pp - peak p u lse c u rrent (a) 10 50 1 10 8 61214161820222426 28 uni-directional only t a = 25 c icte5 icte8 icte10 icte12 icte18 icte15 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 200 p d - po w er dissipation ( w ) t l - lead temperat u re (c) l = 0.375" (9.5 mm) lead lengths 1.0 (25.4) min. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 0.210 (5.3) 0.190 (4.8) dia. 0.042 (1.07) 0.038 (0.96) dia. case s tyle 1.5ke
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